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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1369 DESCRIPTION With TO-220 package High collector power dissipation High current capability APPLICATIONS For general purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage HAN INC Emitter-base voltage Collector current Collector current-peak SEM GE Open base Ta=25ae Open emitter OND IC CONDITIONS TOR UC VALUE -60 -60 -5 -3 -6 2.0 UNIT V V V A A Open collector PC Collector power dissipation TC=25ae 40 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB1369 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-50|I A; IE=0 -60 V V(BR)EBO Emitter-base breakdown voltage IE=-50|I A; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -1.5 V VBEsat Base-emitter saturation voltage IC=-2A; IB=-0.2A -1.5 V ICBO Collector cut-off current VCB=-60V; IE=0 -10 |I A IEBO Emitter cut-off current hFE fT DC current gain VEB=-4V; IC=0 -10 |I A IC=-0.5A ; VCE=-5V 100 Transition frequency COB Collector output capacitance HAN INC SEM GE IC=-0.5A; VCE=-5V f=1MHz ; VCB=10V OND IC TOR UC 320 15 80 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1369 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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